AlN Growth Process

HexaTech, Inc. has proprietary process technology for manufacturing AlN single crystals of highest quality. Since its founding in 2001, HexaTech's R&D efforts have yielded a wealth of proprietary knowledge in the field of III-nitride compound semiconductors. HexaTech's key developments include a commercially viable process for the seeded growth of AlN single crystals, and recently demonstrated a polarity-controlled device layer deposition process compatible with industry-standard MOCVD growth equipment. Polarity control opens processing routes leading to novel device concepts that have been inaccessible thus far.

HexaTech has successfully combined the benefits of physical vapor transport (PVT) and of seeded growth for the reproducible production of AlN single crystals. Seeded growth enables the fabrication of AlN boules of pre-defined crystallographic orientation, and of reproducible quality. AlN wafers fabricated from these crystals are of well-defined orientation and of highest crystal quality. HexaTech has proprietary process technology and know-how for manufacturing aluminum nitride crystals and wafers. Starting with inexpensive, commercially available AlN powder, we grow single crystalline AlN boules in custom built furnaces at temperatures exceeding 2000°C.

The boules are then sliced into wafers, polished and tested. HexaTech has accumulated ten years of AlN crystal growth process expertise; the Company’s technology, core patents and manufacturing know-how represent a sustainable competitive advantage.