AlN offers many enabling improvements over existing SiC- and GaN-based semiconductor technology. For ultraviolet optoelectronics and power devices, AlN provides an isostructural, native template for AlxGa1-xN devices. This leads to increased device performance and reliability through pseudomorphic growth of low defect density device layers.
For optoelectronic and power conversion applications, AlN’s wide band gap provides several advantages. In optoelectronics, AlN substrates enable growth of high-quality, Al-rich AlGaN device structures (LEDs and lasers) that emit in the UV-C spectral range. For power conversion and RF devices, it leads directly to increased breakdown fields, allowing higher-power operation. AlN’s wide band gap also yields far lower intrinsic carrier concentrations at elevated temperatures, which, along with its superior thermal conductivity, simplifies heat extraction schemes and reduces leakage current.
|The wafers we can supply possess the highest available crystal quality. HexaTech wafers have an average dislocation density of 102 - 104 cm-2, which translates directly into epitaxial films of similar quality. This represents up to a six order of magnitude improvement in dislocation density, compared to typical sapphire-based technology.|