AlN Substrate Products



Next generation electronic and optoelectronic devices demand advances in semiconductor materials. UV-C optoelectronics, high performance power conversion devices and high power, high frequency RF devices are all made using AlGaN epitaxial layers that have high Al concentrations, typically above 60%. The key to manufacturing these high performance devices is access to high quality aluminum nitride (AlN) substrates on which these epitaxial layers are laid down.

Without the use of AlN, device manufacturers are relegated to building AlGaN-based devices on sub-optimal substrates such as sapphire or silicon carbide (SiC), and therefore are forced to implement exotic, and sometimes expensive fabrication techniques to compensate for the mismatch in materials. From a market perspective, this alternative approach has been both disappointing and predictable; devices riddled with defects that don’t meet the performance or reliability needs of the customer.

HexaTech AlN Wafers

By manufacturing devices directly on native AlN substrates, HexaTech’s process shows 10,000 to 1,000,000 times fewer defects than the next best technologies. HexaTech’s high quality substrates translate to devices with superior performance, reliability and production yields.

HexaTech currently offers single crystalline AlN substrates in c-plane and m-plane orientation.

HexaTech single cystalline AlN wafers



Specifications


Part Number Orientation UV Transparency Typical Applications
AlN-10 c-plane No Power Semiconductors, Laser Diodes
AlN-20 m-plane No Power Semiconductors, Laser Diodes
AlN-30 c-plane Yes UV-C LEDs
AlN-50 c-plane Semi UV-C LEDs
AlN-60 m-plane Semi UV-C LEDs

Please contact HexaTech Sales for details on available wafer sizes, pricing and lead times.