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JUNE 16, 2020

HexaTech Announces Expansion of High Transparency Aluminum Nitride Substrate Product Line

Advance Drives Performance Gains of 265 nm Optoelectronic Components

MORRISVILLE, N.C. (June 16, 2020) – HexaTech, Inc. announced today an expansion of its deep-UV transparent 2-inch diameter, single crystal aluminum nitride (AlN) substrate product line, launched earlier this year. This new product line extension provides significantly higher substrate transparency for dramatically improved optoelectronic device performance. HexaTech, the world’s leading commercial supplier of single crystal AlN substrates, continues to drive technology development programs in direct support of the increasing application demands of the ultraviolet C (UV-C) wavelength light-emitting diode (LED) market.

“HexaTech has been laser-focused on accelerating the performance and production capabilities of our high transparency product line, which are being aggressively pursued by our customers,” noted HexaTech CEO, John Goehrke. He added, “We will continue with these intensive development efforts, and look forward to delivering even greater product performance and value in the coming months.”

Dr. Raoul Schlesser, HexaTech CTO and co-founder, stated “Based on a comprehensive matrix of crystal growth parameters, we have rapidly expanded our capabilities, reducing the deep-UV absorption coefficients by a factor of 2, to as low as 30 cm-1 at 265 nm. Moreover, given recent results of our ongoing activities, we are confident in further improvements in transparency, without sacrificing the market-leading crystal quality that our customers have come to know and expect.”

All of HexaTech’s 2-inch diameter products, including the new deep-UV transparent substrate product line, are available now with standard lead times. For more information on HexaTech’s technology and products, please visit, or contact HexaTech at

About HexaTech: HexaTech, a Stanley Electric Group Company, conducts the development, manufacturing and sales of AlN semiconductor substrates, which is a key component for various devices such as deep ultraviolet LEDs, high performance power conversion devices and high power, high frequency RF devices. The headquarters in North Carolina, USA, for more information on HexaTech’s technology and products, please visit, or contact HexaTech at

About Stanley Electric: Stanley Electric is a global company that manufactures automotive equipment and electronic components with cutting edge optical technologies. With manufacturing at its core, Stanley Electric invests in its group companies around the world to produce automotive lamps, LEDs(ultra violet, visible, infrared) and other electronics. The company shall contribute broadly to society by exploring the infinite possibilities of light and bringing its value to humankind. Globally headquartered in Tokyo, Japan, for more information about Stanley Electric, please visit

APRIL 21, 2020

HexaTech Launches Deep-UV Transparent 2-Inch Diameter Aluminum Nitride Substrates

Key Enabling Technology for 265 nm Optoelectronic Components

MORRISVILLE, N.C. (April 21, 2020) – HexaTech, Inc. announced today the launch of its deep-UV transparent 2-inch diameter, single crystal aluminum nitride (AlN) substrate product line. This capability is targeted to directly support commercial production of high-performance ultraviolet C (UV-C) wavelength light-emitting diodes (LEDs), and follows the announcement of HexaTech’s 2-inch diameter, defect-free AlN substrate capability in May of last year. As the world’s leading commercial supplier of single crystal AlN substrates, HexaTech developed this application-specific product to satisfy the technology needs of its strategic business partners and the actively growing UV-C LED market.

“This deep-UV transparency capability, especially when coupled with HexaTech’s market-leading crystal quality, continues to demonstrate both the wide-ranging potential of the AlN platform, and the outstanding technical abilities of our development team”, remarked HexaTech CEO, John Goehrke.

Gregory Mills, HexaTech VP of Business Development emphasized, “The 2-inch deep-UV substrate launch is a game-changer for UV-C LED applications. Our customers now have a no-compromise solution to produce deep-UV LEDs at 265 nm, which have been shown to exceed the operational performance of any sapphire-based part at this wavelength.”

HexaTech’s 2-inch diameter deep-UV transparent substrates are available now with standard lead times. For more information on this and HexaTech’s AlN substrate technology, please visit, or contact HexaTech at

MAY 07, 2019

HexaTech Achieves Defect-Free 2" Diameter Aluminum Nitride Substrate

New Milestone in AlN Substrate Performance

MORRISVILLE, N.C. (May 7, 2019) – HexaTech, Inc. announced today the first known demonstration of a defect-free 2" diameter aluminum nitride (AlN) substrate. HexaTech, the world’s leading commercial supplier of single crystal AlN substrates, attained this milestone in performance as part of its highly focused research and development program, combined with the direct support of its strategic business partners.

HexaTech co-founder and CTO, Dr. Raoul Schlesser commented, “This is the largest known single crystal AlN substrate that is completely free of macroscopic defects, and accomplishes a long-standing goal as part of our 2" product development. Full-substrate reflection X-ray topography confirms this achievement, which will support and accelerate commercial production of high quality 2" material.”

2 inch substrate

Image 1 - Full Substrate Optical Image

2 inch topograph

Image 2 - Full Substrate XRT Image

“Less than a year from our first 2" demonstration, reaching this level of perfection is a testament to the efforts of the entire HexaTech team, and highlights our relentless drive to provide our customers the ultimate in AlN substrate performance”, stated HexaTech CEO, John Goehrke. “This capability establishes a new baseline for sustaining our vision of continued diameter expansion and greater market adoption”, he added.

HexaTech’s 2" diameter substrates, in addition to 35 mm and 25 mm substrates, are available now with standard lead times. For more information on this and HexaTech’s AlN substrate technology, please visit, or contact HexaTech at

APRIL 24, 2018

HexaTech Launches 2" Diameter Aluminum Nitride Substrate Product Line

Breakthrough in Commercial AlN Substrate Capability

MORRISVILLE, N.C. (April 24, 2018) – HexaTech Inc. announced today the launch of its 2" diameter aluminum nitride (AlN) substrate product line. HexaTech, the world’s leading commercial supplier of single crystal AlN substrates, is launching this milestone product in conjunction with this week’s International Conference on UV LED Technologies & Applications (ICULTA‐2018) in Berlin, Germany.

“This achievement is the result of our intense, focused research and development activities, producing critical breakthroughs in AlN crystal growth performance”, noted John Goehrke, HexaTech CEO. He added, “Together with strong support from our strategic partners, including OSRAM as announced last year, we have again raised the bar for AlN substrate technology, enabling world‐leading value for world‐ leading device performance.”

Gregory Mills, VP of Business Development for HexaTech emphasized, “This capability is the leading edge of a long‐term, production‐oriented product portfolio, which will enable our customers to quickly and easily transition deep‐ultraviolet (UV‐C) optoelectronic/electronic device development and production to an AlN substrate platform, delivering superior device performance coupled with cost‐ effective production scaling, process integration, and accelerated time to market.”

“By challenging perceived constraints and aggressively pursuing solutions at each step of the crystal growth process, we have developed a significant shift in capability which breaks previously observed limitations. An outstanding team effort is responsible for this milestone, and sets the stage for both continued diameter expansion and increased process yields, ultimately rivaling the price:performance ratio of other mature compound semiconductor technologies, such as SiC and GaAs”, stated Dr. Raoul Schlesser, HexaTech co‐founder and VP of Crystal and Wafer Development.

HexaTech’s 2" diameter substrates are available with standard lead times. For more information on this and HexaTech’s AlN substrate technology, please visit our AlN Wafer Products page, or contact HexaTech at

FEBRUARY 15, 2017

HexaTech and OSRAM Announce Strategic Relationship

Long Term Supply Agreement and IP Licensing Form Basis of Collaboration

MORRISVILLE, N.C. (February 15, 2017) – HexaTech Inc. announced today the signing of two strategic agreements with OSRAM Opto Semiconductors GmbH, of Regensburg, Germany. The agreements include a long term supply commitment for HexaTech’s aluminum nitride (AlN) substrates, direct support of HexaTech’s 2” diameter substrate development program, as well as licensing of certain HexaTech intellectual property (IP).

HexaTech, the world’s leading commercial supplier of single crystal AlN substrates, has developed a unique and valuable knowledge base for optoelectronic, high power and RF (radio frequency) applications based on its proprietary material, helping to activate and promote a significant market pull for its underlying substrate technology.

“We view this collaborative partnership with OSRAM as truly a win-win for both companies,” stated HexaTech CEO John Goehrke. “By licensing our technology, OSRAM is able to accelerate their UV-C LED device development based on HexaTech’s material, and we are able to focus on our core competency, supplying world-class AlN substrates.” He further added, “We’re thrilled that OSRAM, a clear industry leader, recognizes the tremendous value our IP and substrates provide for UV-C applications, which once again demonstrates our belief that the best substrate material yields the best device performance.”

Hans-Juergen Lugauer, Head of UV-LED Research and Development at OSRAM Opto Semiconductors remarked, “Through OSRAM’s strategy of actively expanding our non-visible optoelectronic product portfolio into the UV-C wavelength range, we are poised to capitalize on this rapidly growing market segment. Establishing a long-term strategic relationship with HexaTech, a recognized industry leader in the field of AlN, will allow us to develop highly efficient and reliable deep UV devices, positioning OSRAM as the dominant high performance optoelectronic technology provider from the deep ultraviolet through infrared wavelengths.”

For more information on HexaTech’s AlN substrate technology, please visit our AlN Wafer Products page, or contact HexaTech at


OSRAM, based in Munich, is a globally leading lighting manufacturer with a history dating back about 100 years. The product portfolio includes high-tech applications based on semiconductor technology such as infrared or laser lighting. The products are used in highly diverse applications ranging from virtual reality, autonomous driving or mobile phones to smart and connected lighting solutions in buildings and cities. In automotive lighting, the company is the global market and technology leader. Based on continuing operations (excluding Ledvance), OSRAM had around 24,600 employees worldwide at the end of fiscal 2016 (September 30) and generated revenue of almost €3.8 billion in that fiscal year. The company is listed on the stock exchanges in Frankfurt and Munich (ISIN: DE000LED4000; WKN: LED400; trading symbol: OSR). Additional information can be found at

JULY 26, 2016

HexaTech Demonstrates UVSure™ High‐Performance UV‐C LED

First Generation Aluminum Nitride‐Based Device Achieves Market‐Leading Performance

MORRISVILLE, N.C. (July 26, 2016) – HexaTech Inc. announced today the demonstration of its first generation UVSure™ UV‐C LED, based on HexaTech’s proprietary and world-leading aluminum nitride (AlN) substrate material. The 263 nm wavelength device achieves 6 mW in a 0.15 mm2 active area die. When scaled to our second generation larger footprint, the die is expected to produce approximately 24 mW, which is twice the radiant flux of competitive products.

Further, when driven in pulse mode to 300 mA, the same 0.15 mm2 active area die is able to reach 19 mW, or approximately 76 mW in the large die format.

“This demonstration is a milestone in our business, and is the direct result of intense device R&D coupled with the use of our exclusive high quality AlN substrate material,” stated HexaTech CEO John Goehrke. He added, “This capability allows us to engage the UV-C LED market at the right moment, linking together incredibly strong interest with cutting-edge performance. It also clearly demonstrates our continued assertion that the best substrate material yields the best device performance, and this first generation result is just the beginning.”

“We are truly excited to be in a position to support the rapidly expanding UV-C LED customer interest seen over the last several years,” remarked Gregory Mills, HexaTech’s Director of Business Development. “With point-of-use (POU) sterilization applications alone representing a $400M+ opportunity in the coming years, we anticipate significant corporate expansion and strategic customer engagement,” he noted.

Dr. Joseph Smart, Director of LED Development commented, “HexaTech’s world-leading, high quality bulk AlN substrates are the essential foundation for attaining these results, enabling near perfect epitaxial growth quality throughout the active region of the device, essential to produce both high internal quantum efficiency (IQE) and long component lifetimes. This is something that competing sapphire substrate technology simply cannot sustain at these wavelengths.”

JULY 30, 2015

HexaTech and Okaya Sign Strategic Representation Agreement

Leaders Establish Broad Ties in Support of Japanese Market

MORRISVILLE, N.C. and NAGOYA, JAPAN – HexaTech, Inc., a market leader in Aluminum Nitride (AlN) based semiconductor material and devices, announced today the signing of a broad, strategic agreement with Okaya & Co., Ltd. of Nagoya, Japan, and its US subsidiary, Okaya USA, Inc.

The agreement establishes Okaya as the sole representative for HexaTech’s AlN substrate products in Japan, and also includes a direct equity investment by Okaya in HexaTech. It further sets the stage for Okaya to assume a leadership position to market and sell HexaTech’s line of UV-C LEDs targeted for launch later this year.

HexaTech’s ultra-high quality AlN materials have been shown to be an essential foundation for record-setting UV-C LEDs, which hold tremendous potential to revolutionize the sterilization and purification markets, by providing compact, highly efficient, long-life sources of light.

John Goehrke, HexaTech CEO stated, “We are very excited about the agreement, and the close collaborative relationship that we have forged with Okaya. Their strong belief in HexaTech and our current and future products, as supported by the Japanese market, highlight that our business strategy is ideally positioned and customer-focused. Further, as we look to our upcoming UV-C LED launch, we anticipate a further integration of our business activities, relying on Okaya’s strengths in this important market.”

“We are very excited to form this strategic alliance with HexaTech’, remarked Okaya senior management. ‘HexaTech’s current substrate products, as we know from our customers, are not only world-leading, but we foresee their future LED products to be in great demand, creating significant opportunities for both companies.”

About Okaya

Since its founding in 1669 in Nagoya, Japan, and throughout its 346-year-history, Okaya has evolved into a global trading company, engaged in a broad range of businesses including domestic and overseas transactions in iron and steel, metals, machinery, tools, electronics, piping components and housing facilities, construction development, chemicals, foods, and many other products.

As part of the Electrical and Electronic products segment, Okaya handles an extensive range of electrical equipment, including installation and power distribution systems. In the more advanced fields of electronics, Okaya is involved in the marketing of semiconductors and electronic machinery and equipment. For additional company and product information, please visit us at

JULY 1, 2015

HexaTech Wins Continued Department of Energy Funding

Demonstrated Results Lead to $1.2M Extension of Previous ARPA‐E Contract

MORRISVILLE, N.C. (July 1, 2015) – HexaTech Inc. announced today that it has received a continuation of funding under the U.S. Department of Energy’s Advanced Research Projects Agency (ARPA‐E) development program. The cost‐share extension is valued at $1.2 million over 1 year, and follows $2.8 million over 2 years when the contract was initiated in 2012.

ARPA‐E is an innovative and collaborative government agency that catalyzes transformational energy technologies through funding, technical assistance, and market readiness to accelerate the pace of energy innovation.

The HexaTech contract focuses on the development of high power semiconductor switching devices based on Aluminum Nitride (AlN) to more efficiently control the flow of electricity across high‐voltage electrical lines. AlN‐based devices should exceed the capabilities of currently used materials, enabling smaller, more reliable components. The further implementation of these components could decrease the cost of electricity transmission while increasing overall grid security and reliability.

HexaTech CEO John Goehrke noted, “This contract extension will allow us to further expand our market leadership in high power AlN device development. Combined with ARPA‐E’s unique Tech‐To‐Market concept, we anticipate not only raising the bar in device performance, but also raising awareness for AlN in general, which will in turn be a significant growth opportunity for our core substrate business.”

“This continued support from ARPA‐E will allow us to demonstrate the potential of AlN for high voltage devices by optimizing MOCVD growth parameters, as well as fabricating and testing commercially‐ oriented components", commented Dr. Baxter Moody, Principal Investigator for the program at HexaTech. He added "HexaTech’s world‐leading, high quality bulk AlN substrates are the ideal foundation for supporting these designs, and will be essential to maximize high power semiconductor device performance in the future.”

NOVEMBER 8, 2013

HexaTech Demonstrates Industry Leading AlN Crystal Growth Capability

Reports World’s First 33 mm Low Defect Single Crystal Material

MORRISVILLE, N.C. (November 8, 2013) – Aluminum nitride (AlN) material leader HexaTech, Inc., today presented a demonstration of what is believed to be the world’s first 33 mm diameter, single crystal boule free of macroscopic structural defects. Due to its unique physical and electrical properties, AlN is viewed by many as the ultimate semiconductor platform for short wavelength, UV-C emitters and high power electronic devices.

HexaTech co-founder and Vice President of Crystal and Wafer Development, Dr. Raoul Schlesser, noted that “this result validates HexaTech’s growth methodology and capability, and represents a significant stepping stone on our way to high-quality 2” diameter material and beyond.”

The company presented a slice from an as-grown boule, shown below in Figure 1, to evidence the structural quality achievable with HexaTech’s proprietary growth technology.

33 mm AlN boule top, free of macroscopic structural defects

Figure 1

“This crystal represents the tremendous progress seen during the last 12 months, where we’ve expanded our growth diameters from less than 20 mm, to over 30 mm, while maintaining every aspect of the crystal quality. Based on this success, we are even more confident in our strategy and ability to produce AlN boules of highest quality using a physical vapor transport (PVT) growth process”. The PVT crystal growth technique has been key to the development of silicon carbide (SiC) crystals, where multiple groups have already demonstrated boule diameters up to 150 mm.


HexaTech Begins High Volume Substrate Shipments

Company Commences Deliveries to Multiple Asian LED Manufacturers

MORRISVILLE, N.C. (September 6, 2013) – With the demand for high quality, single crystal aluminum nitride (AlN) accelerating, HexaTech today announced that it has initiated delivery to multiple, high volume LED manufacturers in Asia.

“This milestone is worth highlighting due not only to the technical achievements and quality leadership that our customers recognize with their orders, but also to our internal process capability which is able to simultaneously deliver both high quality and high volume”, commented HexaTech CEO Joe Grzyb.

Mr. Grzyb further noted “these deliveries mark an inflection point in the industry, where AlN is moving from an R&D product into mainstream manufacturing. The pull this creates on our production process, generates accelerated cycles of learning, leading to even greater progress in the future”.

There is a growing market opportunity for UV-C lasers used for chemical, biological, and explosive material detection. “HexaTech's core expertise in AlN crystal growth and wafer fabrication has already led to the development of world-class UV-C LEDs with previously unachievable device lifetimes”, noted Joe Grzyb, HexaTech CEO. “Our AlN substrate platform, again, advances UV-C opto-electronics to new levels of performance.”

The company also announced today a new generation of its AlN material set, with the formal launch of its AlN-50 product. This product combines the industry-leading, high quality advantages of its long-standing AlN-10 product, with that of its high UV transparency AlN-30 product.

“The new AlN-50 material is the best current solution to offer customers the high bulk quality they have come to expect from HexaTech material, combined with a more manufacturing-friendly substrate for UV-C applications”, noted Dr. Raoul Schlesser, HexaTech co-founder and Vice President of Crystal and Wafer Development.

HexaTech AlN-50 material is immediately available in production quantities. For more information, please visit our Wafer Sales Page, or contact HexaTech directly at

AUGUST 26, 2013

HexaTech Co-Authors 15 Papers at ICNS-10

Leads Industry with Strong Technical Presence at International Conference

MORRISVILLE, N.C. and WASHINGTON, D.C. (August 26, 2013) – The 10th International Conference on Nitride Semiconductors 2013 (ICNS-10) took place just outside Washington, D.C., and showcased high-impact scientific and technological advances in materials and devices based on group-III nitride semiconductors. As an industry leader in the field of aluminum nitride (AlN), HexaTech held a prominent position by authoring or co-authoring 15 presentations or posters during the 4 day event.

Deep UV LEDs were in the spotlight at ICNS-10 and Tokuyama Corporation scientist Toru Kinoshita announced, in his invited presentation, the highest to date published output power density for deep UV LEDs. This feat was achieved by combining HexaTech’s high quality AlN substrates with Tokuyama’s highly UV transparent HVPE AlN technology. Output power density was reported to be 60 W/cm2 for LEDs emitting at a wavelength of 265 nm, which is more than a 2X increase over the output power density by Tokuyama/HexaTech, in a November 2012 issue of Applied Physics Express.

HexaTech scientist Dr. Seiji Mita presented a paper entitled: “Influence of Offcut of AlN (0001) Substrates on the Optical Properties of AlN/AlGaN Multiple Quantum Well”. In his talk, it was noted that growth of multiple quantum well (MQW) structures with high internal quantum efficiency required smooth and flat epitaxy, which strongly depended on the offcut angle of the substrate. HexaTech’s control of offcut angle, coupled with the company’s AlN-RFD2 polish process, provided the ideal base for the research and important results.

From longtime collaborator WideBandgaps Laboratory at North Carolina State University, led by Profs. Zlatko Sitar and Ramón Collazo, graduate student Isaac Bryan presented a paper entitled: “A Study on Homoepitaxial AlN Thin Films Deposited on m-plane AlN substrates by MOCVD”. During the talk, it was shown that the research team was able to deposit AlN epitaxial layers by MOCVD on m-plane AlN single crystal substrates, which possessed both atomically smooth surfaces and high crystalline quality. Again, the utilization of HexaTech’s industry-leading, low dislocation crystal growth process, combined with the AlN-RFD2 polish capability, allowed for a state-of-the-art demonstration of what is possible with AlN material.

Dr. Baxter Moody, Director of Device Development at HexaTech commented, “The results of our collaboration with Tokuyama clearly demonstrate that single crystal AlN-based DUV-LEDs can deliver the performance that the disinfection industry requires today.”

“However, there remains much to be learned about the materials that go into building LEDs and other devices. Fundamental materials properties can be obscured by defects, and therefore, the availability and widespread use of our high quality substrates is instrumental in defining these fundamental properties for AlN and AlGaN. The number of AlN-centered presentations at ICNS-10 indicates significant new knowledge is being generated to bring this material system closer to the maturity level of traditional semiconductor materials”, added Dr. Moody.

APRIL 5, 2013

HexaTech Achieves Groundbreaking Results for AlN Substrate Quality

Demonstration of Industry-Leading Capability with Its New ‘AlN- RFD2’ Polish Process

MORRISVILLE, N.C. (April 5, 2013) – As the development and commercial integration of UV-C light emitting diodes (LEDs) rapidly expands, the need for optimum device performance and lifetime have become critical factors for customer adoption. It is well understood that substrate quality, both bulk and surface, strongly influence the ability to achieve high power density (Pout/mm2), high internal quantum efficiencies (IQE), and long device life.

Complementing HexaTech’s industry leading low-dislocation bulk aluminum nitride (AlN) crystal quality, the company today announced its latest evolution in polish technology, AlN-RFD2. The AlN-RFD2 process is able to achieve surface roughness values comparable to silicon (Si), which has been perfected over decades of research and development.

Typical surface roughness of HexaTech’s high quality, single crystal AlN product is <0.2 nm RMS, nearly an order of magnitude better than some other compound semiconductors on the market today. A representative atomic force microscope (AFM) image of a HexaTech AlN substrate surface is seen below in Figure 1.

AFM image of HexaTech substrate surface

Figure 1

“With roughness being measured in the picometer (pm) range, and near defect-free atomic steps being clearly resolved, we now have a platform to produce ultra-high quality epitaxial layers, leading to maximum device performance”, commented Dr. Rafael Dalmau, Manager of Wafer Processing Operations at HexaTech.

HexaTech CEO Joe Grzyb further noted, “In almost all semiconductor devices, operating lifetime is directly related to the defect density in the epiwafer. With our AlN-RFD2 process, we can offer our customers industry-leading bulk and surface quality, accelerating the development and production demands for AlN-based devices”.

FEBRUARY 4, 2013

HexaTech Validates AlN Substrate Platform for UV-C Laser Fabrication

Record-breaking lasing performance demonstrated in optically pumped, 264 and 280 nm lasers fabricated on HexaTech AlN substrates.

MORRISVILLE, N.C. – In a parallel effort to its development of UV-C light emitting diodes (LEDs), HexaTech recently demonstrated optically pumped, AlGaN-based lasers grown on highest-quality, single crystalline AlN substrates. Laser structures fabricated at HexaTech and tested in collaboration with North Carolina State University (NCSU) featured lasing thresholds as low as 85 kW/cm2 at wavelengths of 264 and 280 nm. This not only represents record-breaking laser performance, but also further validates the value proposition of HexaTech's AlN substrate platform for UV-C opto-electronic applications.

“Our recent results show convincing evidence of the feasibility of a solid-state UV-C laser”, commented Dr. Andy Xie. "The tests not only demonstrate lasing at low pump intensities, but we also observed emission peak line widths as narrow as 0.02 nm, and further telltale signs of a properly operating laser, including spectrally resolved cavity modes, TE-mode polarization, and elliptically-shaped far-field patterns."

The observed lasing at low pump intensities is an important milestone toward the development of semiconductor lasers operating at short wavelengths in the UV-C range. Enabled by HexaTech’s industry-leading, low dislocation density bulk aluminum nitride (AlN) substrates, these results add to the record-breaking UV-C LED and laser performance reported by other groups. The use of high-quality, native AlN substrates that are lattice-matched to the overgrown III-nitride device layers allow for fabrication of opto-electronic devices of superior structural quality, and, thus, previously unachievable performance.

There is a growing market opportunity for UV-C lasers used for chemical, biological, and explosive material detection. “HexaTech's core expertise in AlN crystal growth and wafer fabrication has already led to the development of world-class UV-C LEDs with previously unachievable device lifetimes”, noted Joe Grzyb, HexaTech CEO. “Our AlN substrate platform, again, advances UV-C opto-electronics to new levels of performance.”

Further technical details will be published in the scientific literature in the near future.

DECEMBER 13, 2012

HexaTech Awarded ARPA-E Contract for Aluminum Nitride (AlN) High Voltage Power Electronics

HexaTech, Inc. will develop Aluminum Nitride technology for power devices to more efficiently control the flow of electricity across high-voltage electrical lines. The future “Smart Grid” requires new high efficiency, high frequency power conversion electronics to decrease the cost of electricity transmission while increasing overall grid security and reliability. This development is the first step to establish the epitaxial growth techniques and demonstrate the superior high-voltage performance capability for AlN-based 20 kV power devices.

MORRISVILLE, N.C. – HexaTech has received a $2.2 M award from the U.S. Department of Energy Advanced Research Projects Agency – Energy (ARPA-E) that will enable the development of a new power semiconductor technology for the modernization of our electrical power grid. HexaTech’s high-quality Aluminum Nitride (AlN) technology was identified by the Department of Energy as a transformational, breakthrough technology with significant technical promise.

Using very low dislocation density single crystal AlN substrates, HexaTech will develop novel doping schemes and contact metals for AlN/AlGaN with high Al content. Dr. Baxter Moody, Director of Engineering said “This contract marks the beginning of a technological leap in device performance and efficiency for power semiconductors. The development will enable a significant step toward producing 20 kV AlN-based Schottky diodes (SBD, JBSD) and transistors (JFET, MOSFET). The ARPA-E contract has opened the door for the material development and research to demonstrate AlN high-voltage, high-efficiency power conversion capability.” For power systems and grid-scale power conversion applications, high efficiency AlN-based power devices will offer a significant reduction in size, weight, and cooling.

Power semiconductor devices at this level are not currently available on the market. Experimental devices based on Silicon Carbide (SiC) technology are currently being developed. Compared to SiC technology, it is expected that Aluminum Nitride will enable power electronics with a 10X improvement in performance. Based on the wide bandgap material properties of AlN, the critical field is 6X larger, the on resistance will be lower, and the resulting power device area will be smaller for a comparable power level. This is a transformational technology that will revolutionize the power distribution grid.

OCTOBER 3, 2012

HexaTech and Tokuyama Collaborate to Produce Record UV-C LED Performance

Industry Leaders Demonstrate Dramatic Improvements in Power and Efficiency for UV-C LEDs Used for Water and Surface Disinfection Applications

MORRISVILLE, N.C. and TOKYO, JAPAN – The rapidly accelerating interest in light emitting diodes (LEDs) for disinfection applications operating at UV-C wavelengths requires a solution with high output power, high efficiency and long lifetimes. HexaTech, Inc. today announced the results of an ongoing collaboration with development partner Tokuyama Corporation of Tokyo, Japan, which has demonstrated exceptional output power and dramatic internal quantum efficiency (IQE) improvements. These results raise the bar to what is possible with the technology, and enable commercially available high performance, high reliability UV-C LEDs.

By coupling HexaTech’s industry-leading low dislocation density bulk aluminum nitride (AlN) substrates, with Tokuyama’s hydride vapor phase epitaxy (HVPE) and device fabrication, Tokuyama was able to produce UV-C LEDs with over 25 mW of output power at 265 nm, and internal quantum efficiencies greater than 70%.

“This collaboration demonstrates that when combining HexaTech’s market-leading bulk substrate quality, with Tokuyama’s high quality HVPE and excellent device fabrication, breakthrough, record-setting results are possible”, noted Joe Grzyb, HexaTech CEO. “It further highlights our commitment to working with our customers to bring the best in aluminum nitride technology to market.”

“Working together with HexaTech and their substrates, Tokuyama has made great improvements in the performance of our UV-C LEDs, accelerating the process for their commercial availability “, stated Mr. Toru Kinoshita, Chief Research Engineer at Tokuyama Corporation.

Since their inception, UV-C LEDs have held the promise of a compact, highly efficient, long-life light source for sterilization and purification applications. However, most commercially available products currently struggle with limited output power, efficiency and device lifetimes. A key requirement for improving these limitations is to drive the device defect density down, for which IQE is a key measure and is critically related to the underlying bulk material quality.

“As HexaTech’s own device development has shown, using our high quality, low dislocation material, we are able to produce UV-C LEDs with record-setting reliability and lifetimes, exceeding more than 600 hours of accelerated testing, with virtually no degradation”, commented Dr. Baxter Moody, HexaTech Director of Device Development.

For further technical information see our recent publication in Applied Physics Express.

AUGUST 7, 2012

HexaTech Announces High Transparency Single Crystal Aluminum Nitride Substrates for UV-C LED Applications

Morrisville, NC - HexaTech, Inc. today announced the commercial availability of a new class of high transparency single crystal Aluminum Nitride (AlN) material. This improved capability provides a significant reduction in optical absorption in the UV-C wavelengths, resulting in dramatic improvements in the processing and performance of UV-C optoelectronic components.

This enhanced material will offer an improvement of lifetime and power output for UV-C light emitting diodes (LEDs). For the rapidly growing water purification market, the requirement for extended lifetime and improved efficiency are critical market enabling parameters. This new high transparency bulk AlN substrate material has demonstrated improved output performance for UV-C LEDs, by increasing short wavelength transparency, and limiting the amount of substrate thinning required for optimal UV-C emission.

“This new substrate will provide our customers with the bulk AlN material required to develop industry leading UV-C LEDs which will enable improved EQE, lifetime and reliability” stated Joe Grzyb, HexaTech CEO. “The improved transparency, coupled with industry leading bulk quality, once again demonstrates HexaTech’s commitment to quality and technology leadership.”

The improved material performance, after correction for reflection losses, exhibits absorption coefficient values of < 100 cm-1 (50 cm-1 typical) @ 265 nm, and is measurably superior to previous generations of single crystal AlN.

MAY 22, 2012

Collaboration Improves UV-C LED Substrates for Disinfection Applications

Morrisville, NC May 22, 2012 - HexaTech collaborates with three leading research teams to accelerate the technology advancement in bulk Aluminum Nitride (AlN) substrate materials that enable UV-C LED technology. HexaTech’s single crystal AlN substrates are a critical requirement for the fabrication of UV-C LEDs with high output power and long lifetime. These parameters are key technology enablers for the rapidly expanding disinfection markets.

“The successful collaboration of research scientists from HexaTech, North Carolina State University, Tokuyama Corporation, and Tokyo University of Agriculture and Technology is another important step in the advancement of bulk AlN materials” says Dr. Baxter Moody. “We are excited to work with these leading semiconductor research and manufacturing groups to realize major improvements in substrate transparency and LED performance.”

Details of the collaboration were announced on May 14, 2012 by North Carolina State University in their press release titled “Research Opens Doors To UV Disinfection Using LED Technology”. The complete article can be found here.


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